Effect of a current blocking barrier on a 2–6 μm p-GaAs/AlGaAs heterojunction infrared detector

We report the performance of a 30 period p-GaAs/AlxGa1 − xAs heterojunction photovoltaic infrared detector, with graded barriers, operating in the 2–6 μm wavelength range. Implementation of a current blocking barrier increases the specific detectivity (D*) under dark conditions by two orders of magnitude to ∼1.9 × 1011 Jones at 2.7 μm, at 77 K. Furthermore, at zero bias, the resistance-area product (R 0 A) attains a value of ∼7.2 × 108 Ω cm2, a five orders enhancement due to the current blocking barrier, with the responsivity reduced by only a factor of ∼1.5