This paper presents a series of experiment results on the ageing effects of cyclic junction temperature variations (ΔTj) of low amplitudes in power modules, to help the capturing of module reliability characteristics and the derivation of lifetime models in the future. Power cycling tests, for non-aged and aged modules, are designed to illustrate the failure mechanisms. IGBT modules in actual converters are usually operated in a ΔTj range up to 40degC, therefore tests are carried out to observe the effects of such narrow ΔTj stress cycles on the module lifetime. It is found that the relatively minor stress cycles may not be able to directly initiate a crack but can contribute to the development of damage in the die attach solder layer due t...
Though, significant efforts have led to high solder joint quality, thermomechanical fatigue and dela...
Because of the need for electronics use at temperatures beyond 150??C, new high temperature intercon...
The clamping force is the most important parameter of Press Pack IGBTs (PP IGBTs) as it not only aff...
Operational management for reliability of power electronic converters requires sensitive condition m...
Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycle...
Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycle...
Abstract Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number...
Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycle...
International audienceThe paper presents the impact of thermal cycling frequency on the lifetime of ...
18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, BORDEAUX, ...
The lifetime of an IGBT power electronics module under cyclic temperature loading conditions has be...
This paper presents monitoring of ageing in high power insulated gate bipolar transistor (IGBT) modu...
Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling ca...
In order to meet the through-life reliability targets for power modules, it is critical to understan...
In renewable energy and grid applications, solder-attached power modules are subject to fatigue stre...
Though, significant efforts have led to high solder joint quality, thermomechanical fatigue and dela...
Because of the need for electronics use at temperatures beyond 150??C, new high temperature intercon...
The clamping force is the most important parameter of Press Pack IGBTs (PP IGBTs) as it not only aff...
Operational management for reliability of power electronic converters requires sensitive condition m...
Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycle...
Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycle...
Abstract Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number...
Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycle...
International audienceThe paper presents the impact of thermal cycling frequency on the lifetime of ...
18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, BORDEAUX, ...
The lifetime of an IGBT power electronics module under cyclic temperature loading conditions has be...
This paper presents monitoring of ageing in high power insulated gate bipolar transistor (IGBT) modu...
Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling ca...
In order to meet the through-life reliability targets for power modules, it is critical to understan...
In renewable energy and grid applications, solder-attached power modules are subject to fatigue stre...
Though, significant efforts have led to high solder joint quality, thermomechanical fatigue and dela...
Because of the need for electronics use at temperatures beyond 150??C, new high temperature intercon...
The clamping force is the most important parameter of Press Pack IGBTs (PP IGBTs) as it not only aff...