Determination of absorption coefficients in AlInP lattice matched to GaAs
- Cheong, J.S.
- Ng, J.S.
- Krysa, A.B.
- Ong, J.S.L.
- David, J.P.R.
Publication date
September 2015
DOI Publisher
IOP Publishing ISSN
0022-3727 Citation count (estimate)
5Abstract
The absorption properties of Al0.52In0.48P have been investigated near the fundamental absorption edge by measuring the photocurrent as a function of wavelength in a series of PIN and NIP diodes. Modelling of the photocurrent in these structures enables the absorption coefficients to be determined accurately over a wide dynamic range, which allows the direct and indirect band-gap to be determined
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