Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift applied to the saturable absorber (SA) section has been experimentally characterized. For the first time a fully post-growth technique, quantum well intermixing, was adopted to modify the material bandgap in the SA section. The measurements showed not only an expected narrowing of the pulse width but also a significant expansion of the range of bias conditions generating a stable train of optical pulses. Moreover, the pulses from lasers with bandgap shifted absorbers presented reduced chirp and increased peak power with respect to the nonshifted case
The research presented in this thesis describes how monolithic opto-electronic integration using qua...
The passive sections of a monolithic device must have a wider bandgap than the active regions to red...
The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can be accurately tuned by photo-...
Passive mode-locking in semiconductor lasers in a Fabry–Perot configuration with a bandgap blueshift...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
We report a novel approach for increasing the output power in passively mode locked semiconductor la...
A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatial...
AbstractThe passive sections of a monolithic device must have a wider bandgap than the active region...
The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can be accurately tuned by photo-...
The passive sections of a monolithic device must have a wider bandgap than the active regions to red...
The research presented in this thesis describes how monolithic opto-electronic integration using qua...
The passive sections of a monolithic device must have a wider bandgap than the active regions to red...
The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can be accurately tuned by photo-...
Passive mode-locking in semiconductor lasers in a Fabry–Perot configuration with a bandgap blueshift...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
We report a novel approach for increasing the output power in passively mode locked semiconductor la...
A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatial...
AbstractThe passive sections of a monolithic device must have a wider bandgap than the active region...
The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can be accurately tuned by photo-...
The passive sections of a monolithic device must have a wider bandgap than the active regions to red...
The research presented in this thesis describes how monolithic opto-electronic integration using qua...
The passive sections of a monolithic device must have a wider bandgap than the active regions to red...
The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can be accurately tuned by photo-...