A many‐body theory for the optical susceptibility in highly excited strained‐layer quantum wells is presented. Gain spectra are computed for the example of InxGa1-xAs/InP and different In concentrations, yielding zero, tensile, and compressive strai
This paper presents calculations of THz gain in III-V quantum wells based on transitions between the...
International audienceIn this paper we present an investigation of the optical transitions in strain...
Optical nonlinearities in strained‐layer InGaAs/GaAs multiple quantum wells (MQWs) are studied using...
Nonlinear optical properties of lattice-matched and strained semiconductor quantum wells are compute...
The carrier density modulation response of a semiconductor laser medium is analyzed. The differentia...
We show that manybody-effects and bandgap renormalization can be easily produced in strained-layer q...
The eigenstates of the coupled-band Luttinger Hamiltonian are used to derive modified optical Bloch ...
A new approach to the problem of X-ray edge singularities and peaks of many-body origin observed in...
A new approach to the problem of X-ray edge singularities and peaks of many-body origin observed in ...
Nonlinear optical absorptionspectra and refractive index changes are computed for coupled‐band semic...
In this paper, intersubband optical absorption spectra are computed from an optical susceptibility d...
Optical properties of compressively strained InGaAs/InP vertically stacked multiple quantum wires (Q...
Photoluminescence measurements at different temperatures have been performed to investigate the opti...
Strained quantum-well lasers and modulators are studied in this dissertation. Both dc and high-speed...
Optical and electronic properties of semiconductors heterostructures are analyzed, combining many-bo...
This paper presents calculations of THz gain in III-V quantum wells based on transitions between the...
International audienceIn this paper we present an investigation of the optical transitions in strain...
Optical nonlinearities in strained‐layer InGaAs/GaAs multiple quantum wells (MQWs) are studied using...
Nonlinear optical properties of lattice-matched and strained semiconductor quantum wells are compute...
The carrier density modulation response of a semiconductor laser medium is analyzed. The differentia...
We show that manybody-effects and bandgap renormalization can be easily produced in strained-layer q...
The eigenstates of the coupled-band Luttinger Hamiltonian are used to derive modified optical Bloch ...
A new approach to the problem of X-ray edge singularities and peaks of many-body origin observed in...
A new approach to the problem of X-ray edge singularities and peaks of many-body origin observed in ...
Nonlinear optical absorptionspectra and refractive index changes are computed for coupled‐band semic...
In this paper, intersubband optical absorption spectra are computed from an optical susceptibility d...
Optical properties of compressively strained InGaAs/InP vertically stacked multiple quantum wires (Q...
Photoluminescence measurements at different temperatures have been performed to investigate the opti...
Strained quantum-well lasers and modulators are studied in this dissertation. Both dc and high-speed...
Optical and electronic properties of semiconductors heterostructures are analyzed, combining many-bo...
This paper presents calculations of THz gain in III-V quantum wells based on transitions between the...
International audienceIn this paper we present an investigation of the optical transitions in strain...
Optical nonlinearities in strained‐layer InGaAs/GaAs multiple quantum wells (MQWs) are studied using...
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