© 2020 Elsevier B.V. The article focuses on the optical reflection from the surface of the Ge substrates implanted with Ag+ ions at the low energy of 30 keV and the dose range from 5.0⋅1014 to 1.5⋅1017 ion/cm2. The optical findings were compared with the electron microscopy observations. The study showed that if the ion radiation dose increases, the reflection intensity monotonously decreases in the ultraviolet and visible spectral regions from virgin Ge surface. This occurs due to amorphization if the doses are low and due to formation of nanoporous structure of interwoven nanowires in the near-surface implanted Ge layer for the higher doses. According to the Mie theory modeling of optical scattering by nanostructured Ge shows a qualitativ...
© 2020, Pleiades Publishing, Ltd. Abstract: Results are presented of a study of the morphology of ge...
Germanium ions have been doubly-implanted with different energies and fluences to obtain a quasi-rec...
© 2019 Elsevier Ltd Surface processes for porous Ge (PGe) formed by low-energy high-dose implantatio...
© 2017, Springer Science+Business Media, LLC, part of Springer Nature. The optical reflection of the...
© 2017, National Institute of Optoelectronics. All rights reserved. The new results on the optical r...
© 2018 A. L. Stepanov, V. I. Nuzhdin, V. F. Valeev, V. V. Vorobev, and Y. N. Osin The new results on...
The study addresses the monocrystalline c-Ge substrates implanted by Ag+ ions with the energy of 30 ...
© 2020 Elsevier Ltd The surface morphology of nanoporous Ge (PGe) layers formed by low-energy high-d...
© 2018, Pleiades Publishing, Ltd. We propose a method for the formation of porous germanium (P-Ge) l...
© 2016, Pleiades Publishing, Ltd.Comparative analysis of the structural and optical properties of co...
© 2019, Pleiades Publishing, Ltd. Abstract: Results of an investigation of the surface of germanium ...
The flat monocrystalline c-Ge wafers implanted by 108Ag + ions with the energy E = 30 keV, dose D = ...
Germanium (Ge) surfaces have been irradiated with 26 keV gold (Au) ions at a constant fluence and at...
© 2018 Elsevier Ltd A technical approach is proposed for the synthesis of thin porous PGe layers wit...
© 2018 Institute of Physics Publishing.All Rights Reserved. A novel approach is proposed and tested ...
© 2020, Pleiades Publishing, Ltd. Abstract: Results are presented of a study of the morphology of ge...
Germanium ions have been doubly-implanted with different energies and fluences to obtain a quasi-rec...
© 2019 Elsevier Ltd Surface processes for porous Ge (PGe) formed by low-energy high-dose implantatio...
© 2017, Springer Science+Business Media, LLC, part of Springer Nature. The optical reflection of the...
© 2017, National Institute of Optoelectronics. All rights reserved. The new results on the optical r...
© 2018 A. L. Stepanov, V. I. Nuzhdin, V. F. Valeev, V. V. Vorobev, and Y. N. Osin The new results on...
The study addresses the monocrystalline c-Ge substrates implanted by Ag+ ions with the energy of 30 ...
© 2020 Elsevier Ltd The surface morphology of nanoporous Ge (PGe) layers formed by low-energy high-d...
© 2018, Pleiades Publishing, Ltd. We propose a method for the formation of porous germanium (P-Ge) l...
© 2016, Pleiades Publishing, Ltd.Comparative analysis of the structural and optical properties of co...
© 2019, Pleiades Publishing, Ltd. Abstract: Results of an investigation of the surface of germanium ...
The flat monocrystalline c-Ge wafers implanted by 108Ag + ions with the energy E = 30 keV, dose D = ...
Germanium (Ge) surfaces have been irradiated with 26 keV gold (Au) ions at a constant fluence and at...
© 2018 Elsevier Ltd A technical approach is proposed for the synthesis of thin porous PGe layers wit...
© 2018 Institute of Physics Publishing.All Rights Reserved. A novel approach is proposed and tested ...
© 2020, Pleiades Publishing, Ltd. Abstract: Results are presented of a study of the morphology of ge...
Germanium ions have been doubly-implanted with different energies and fluences to obtain a quasi-rec...
© 2019 Elsevier Ltd Surface processes for porous Ge (PGe) formed by low-energy high-dose implantatio...