Stripe-geometry AlxGa1−xAs-GaAs quantum well heterostructure lasers defined by Si diffusion and disordering

The use of Si diffusion and impurity‐induced layer disordering, via a Si3N4 mask pattern, to construct stripe‐geometry Al x Ga1−x As‐GaAs quantum wellheterostructure lasers on n‐type substrates is described. This leads to a convenient form of index‐guided buried‐heterostructure laser that is easily constructed and replicated (in various geometries) on commonly available n‐type GaAs substrate