Mid-Infrared Intersubband Absorption in p-Ge/SiGe Quantum Wells Grown on Si
- Gallacher, Kevin
- Ballabio, Andrea
- Millar, Ross W.
- Samarelli, Antonio
- Frigerio, Jacopo
- Chrastina, Danny
- Isella, Giovanni
- Baldassarre, Leonetta
- Ortolani, Michele
- Sakat, Emilie
- Biagioni, Paolo
- Paul, Douglas J.
Publication date
January 2015
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) Language
EnglishAbstract
Intersubband absorption from p-Ge quantum wells grown on Si is demonstrated. The absorption can be tuned by adjusting the quantum well thickness. FTIR transmission measurements on as-grown wafers show broad absorption at mid-infrared wavelengths
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