Midinfrared plasmonic sensing allows the direct targeting of unique vibrational fingerprints of molecules. While gold has been used almost exclusively so far, recent research has focused on semiconductors with the potential to revolutionize plasmonic devices. We fabricate antennas out of heavily doped Ge films epitaxially grown on Si wafers and demonstrate up to 2 orders of magnitude signal enhancement for the molecules located in the antenna hot spots compared to those located on a bare silicon substrate. Our results set a new path toward integration of plasmonic sensors with the ubiquitous CMOS platform
We explore the nonlinear optical properties of plasmonic semiconductor antennas resonant in the mid ...
The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recentl...
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrar...
Heavily-doped semiconductor films are very promising to produce mid-infrared plasmonic devices for ...
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infra...
The detection and amplification of molecular absorption lines from a chemical weapons simulant is de...
The detection and amplification of molecular absorption lines from a mustard gas simulant is demonst...
Recent advances in semiconductor film deposition allow for the growth of heavily-doped germanium wit...
Despite the recent introduction of heavily-doped semiconductors for mid-infrared plasmonics, it stil...
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerpri...
Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser ther...
Plasmonic perfect absorbers have found a wide range of applications in imaging, sensing, and light h...
Despite the recent introduction of heavily-doped semiconductors for mid-infrared plasmonics, it stil...
In this work, the growth and the fabrication of heavily doped germanium plasmonic antennas for mid-i...
We investigate the nonlinear optical properties of single resonant plasmonic antennas fabricated fro...
We explore the nonlinear optical properties of plasmonic semiconductor antennas resonant in the mid ...
The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recentl...
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrar...
Heavily-doped semiconductor films are very promising to produce mid-infrared plasmonic devices for ...
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infra...
The detection and amplification of molecular absorption lines from a chemical weapons simulant is de...
The detection and amplification of molecular absorption lines from a mustard gas simulant is demonst...
Recent advances in semiconductor film deposition allow for the growth of heavily-doped germanium wit...
Despite the recent introduction of heavily-doped semiconductors for mid-infrared plasmonics, it stil...
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerpri...
Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser ther...
Plasmonic perfect absorbers have found a wide range of applications in imaging, sensing, and light h...
Despite the recent introduction of heavily-doped semiconductors for mid-infrared plasmonics, it stil...
In this work, the growth and the fabrication of heavily doped germanium plasmonic antennas for mid-i...
We investigate the nonlinear optical properties of single resonant plasmonic antennas fabricated fro...
We explore the nonlinear optical properties of plasmonic semiconductor antennas resonant in the mid ...
The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recentl...
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrar...