In this work, the growth and the fabrication of heavily doped germanium plasmonic antennas for mid-infrared applications are reported. By tuning the phosphorus doping concentration and the antenna geometrical parameters, plasma frequencies for targeting the 8–15 μm spectral region are achieved. 1 μm thick, heavily doped (2.3 × 1019 cm− 3) germanium was used to fabricate dipole antennas of 800 nm width with a gap spacing of 300 nm which demonstrate resonance frequencies around 13 μm and 13.5 μm for 2 μm and 3 μm long structures, respectively. This technology has the potential to be used for mid-infrared sensing applications of hazardous gases and liquids
Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response i...
Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser ther...
We explore the nonlinear optical properties of plasmonic semiconductor antennas resonant in the mid ...
In this work, the growth and the fabrication of heavily doped germanium plasmonic antennas for mid-i...
Heavily-doped semiconductor films are very promising to produce mid-infrared plasmonic devices for ...
Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic ...
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infra...
Despite the recent introduction of heavily-doped semiconductors for mid-infrared plasmonics, it stil...
The detection and amplification of molecular absorption lines from a chemical weapons simulant is de...
We investigate the nonlinear optical properties of single resonant plasmonic antennas fabricated fro...
Recent advances in semiconductor film deposition allow for the growth of heavily-doped germanium wit...
The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recentl...
The detection and amplification of molecular absorption lines from a mustard gas simulant is demonst...
Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response i...
Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser ther...
We explore the nonlinear optical properties of plasmonic semiconductor antennas resonant in the mid ...
In this work, the growth and the fabrication of heavily doped germanium plasmonic antennas for mid-i...
Heavily-doped semiconductor films are very promising to produce mid-infrared plasmonic devices for ...
Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic ...
CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infra...
Despite the recent introduction of heavily-doped semiconductors for mid-infrared plasmonics, it stil...
The detection and amplification of molecular absorption lines from a chemical weapons simulant is de...
We investigate the nonlinear optical properties of single resonant plasmonic antennas fabricated fro...
Recent advances in semiconductor film deposition allow for the growth of heavily-doped germanium wit...
The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recentl...
The detection and amplification of molecular absorption lines from a mustard gas simulant is demonst...
Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response i...
Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser ther...
We explore the nonlinear optical properties of plasmonic semiconductor antennas resonant in the mid ...