A self-consistent model for double barrier Resonant Tunnelling Diodes (RTD) has been investigated. The model involves using the Airy function to obtain an accurate transmission coefficient for electrons tunnelling through the barrier and the consideration of potential shift due to free charge distribution. It will serve to optimize the RTD structure for terahertz applications. A good agreement has been achieved between computed and measured IV characteristics of RTDs
Necessary steps for integrating a RTD (Resonant Tunneling Diode) into circuit networks is presented....
By using a transfer-matrix method on the basis of two-dimensional (2D) Bloch sums in accordance with...
International audienceThe formation of two-dimensional electron gases (2DEGs) at AlxGa1−xN/GaN hexag...
A self-consistent model for double barrier Resonant Tunnelling Diodes (RTD) has been investigated. T...
Resonant tunneling diode (RTD) is a type of electronic device that has been reviewed regularly by va...
We present a model of the double barrier resonant-tunneling diode (DBRTD), in which the tunneling is...
In this paper, we studied the accuracy of Atlas commercial technology computer-aided design (TCAD) n...
\u3cp\u3eWe present a model of the double barrier resonant-tunneling diode (DBRTD), in which the tun...
We have developed a computer program which calculates the electron concentration, potential profile ...
We have developed a computer program which calculates the electron concentration, potential profile ...
We have developed a computer program which calculates the electron concentration, potential profile ...
We have developed a computer program which calculates the electron concentration, potential profile ...
We have developed a computer program which calculates the electron concentration, potential profile ...
Resonant tunneling diodes (RTD) are considered as the fastest semiconductor-based electronic devices...
AbstractIn this work, we propose GaN based Double Barrier-Resonant Tunneling Diode (DBRTD) model and...
Necessary steps for integrating a RTD (Resonant Tunneling Diode) into circuit networks is presented....
By using a transfer-matrix method on the basis of two-dimensional (2D) Bloch sums in accordance with...
International audienceThe formation of two-dimensional electron gases (2DEGs) at AlxGa1−xN/GaN hexag...
A self-consistent model for double barrier Resonant Tunnelling Diodes (RTD) has been investigated. T...
Resonant tunneling diode (RTD) is a type of electronic device that has been reviewed regularly by va...
We present a model of the double barrier resonant-tunneling diode (DBRTD), in which the tunneling is...
In this paper, we studied the accuracy of Atlas commercial technology computer-aided design (TCAD) n...
\u3cp\u3eWe present a model of the double barrier resonant-tunneling diode (DBRTD), in which the tun...
We have developed a computer program which calculates the electron concentration, potential profile ...
We have developed a computer program which calculates the electron concentration, potential profile ...
We have developed a computer program which calculates the electron concentration, potential profile ...
We have developed a computer program which calculates the electron concentration, potential profile ...
We have developed a computer program which calculates the electron concentration, potential profile ...
Resonant tunneling diodes (RTD) are considered as the fastest semiconductor-based electronic devices...
AbstractIn this work, we propose GaN based Double Barrier-Resonant Tunneling Diode (DBRTD) model and...
Necessary steps for integrating a RTD (Resonant Tunneling Diode) into circuit networks is presented....
By using a transfer-matrix method on the basis of two-dimensional (2D) Bloch sums in accordance with...
International audienceThe formation of two-dimensional electron gases (2DEGs) at AlxGa1−xN/GaN hexag...