In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo (3DMSB-EMC) tool targeting the simulation of nanoscaled FinFETs and nanowire transistors. In order to deliver computational efficiency, we have developed a self-consistent framework that couples a MSB- EMC transport engine for a 1D electron gas with a 3DPoisson- 2DSchro ̈dinger solver. Here we use a FinFET with a physical channel length of 15nm as an example to demonstrate the appli- cability and highlight the benefits of the simulation framework. A comparison of the 3DMSB-EMC with Non-Equilibrium Green’s Functions (NEGFs) in the ballistic limit is used to verify and validate our approach
We describe the multi-valley/multi-subband Monte Carlo (MV–MSMC) approach to model nanoscale MOSFETs...
The design of nanoscale CMOS devices poses new challenges to the TCAD community. The potential advan...
A novel 3-D TCAD Monte Carlo n-type semiconductor device simulator is presented in this work. The fi...
In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo (3DMSB-EMC) tool...
The need for an accurate simulation of non-planar devices such as FinFETs and nanowire based FETs, i...
In this paper, we employ a newly-developed one-dimensional multi-subband Monte Carlo (1DMSMC) simula...
We developed a Multi-Subband Ensemble Monte Carlo simulator for non-planar devices, taking into acco...
The need for an accurate simulation of non-planar devices such as FinFETs and nanowire based FETs, i...
In this paper, we employ a newly-developed one-dimensional multi-subband Monte Carlo (1DMSMC) simula...
As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has b...
The inclusion in advanced device simulators of quantum effects different than standard confinement b...
Si SOI FinFETs with gate lengths of 12.8 nm and 10.7 nm are modelled using 3D Finite Element Monte C...
We describe the multi-valley/multi-subband Monte Carlo (MV–MSMC) approach to model nanoscale MOSFETs...
We describe the multi-valley/multi-subband Monte Carlo (MV–MSMC) approach to model nanoscale MOSFETs...
We describe the multi-valley/multi-subband Monte Carlo (MV–MSMC) approach to model nanoscale MOSFETs...
We describe the multi-valley/multi-subband Monte Carlo (MV–MSMC) approach to model nanoscale MOSFETs...
The design of nanoscale CMOS devices poses new challenges to the TCAD community. The potential advan...
A novel 3-D TCAD Monte Carlo n-type semiconductor device simulator is presented in this work. The fi...
In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo (3DMSB-EMC) tool...
The need for an accurate simulation of non-planar devices such as FinFETs and nanowire based FETs, i...
In this paper, we employ a newly-developed one-dimensional multi-subband Monte Carlo (1DMSMC) simula...
We developed a Multi-Subband Ensemble Monte Carlo simulator for non-planar devices, taking into acco...
The need for an accurate simulation of non-planar devices such as FinFETs and nanowire based FETs, i...
In this paper, we employ a newly-developed one-dimensional multi-subband Monte Carlo (1DMSMC) simula...
As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has b...
The inclusion in advanced device simulators of quantum effects different than standard confinement b...
Si SOI FinFETs with gate lengths of 12.8 nm and 10.7 nm are modelled using 3D Finite Element Monte C...
We describe the multi-valley/multi-subband Monte Carlo (MV–MSMC) approach to model nanoscale MOSFETs...
We describe the multi-valley/multi-subband Monte Carlo (MV–MSMC) approach to model nanoscale MOSFETs...
We describe the multi-valley/multi-subband Monte Carlo (MV–MSMC) approach to model nanoscale MOSFETs...
We describe the multi-valley/multi-subband Monte Carlo (MV–MSMC) approach to model nanoscale MOSFETs...
The design of nanoscale CMOS devices poses new challenges to the TCAD community. The potential advan...
A novel 3-D TCAD Monte Carlo n-type semiconductor device simulator is presented in this work. The fi...