Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at lambda = 1550 nm
- Dumas, D. C. S.
- Gallacher, K.
- Rhead, S.
- Myronov, M.
- Leadley, D. R.
- Paul, D. J.
DOIAbstract
Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum confined Stark effect (QCSE) diodes grown on a silicon substrate. The heterolayers for the devices were designed using an 8-band k.p Poisson-Schrödinger solver which demonstrated excellent agreement with the experimental results. Modelling and experimental results demonstrate that by changing the quantum well width of the device, low power Ge/SiGe QCSE modulators can be designed to cover the S- and C-telecommunications bands