Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET

A comprehensive study of statistical variability (SV) in scaled, fully-depleted (FD) SOI n-channel MOSFET with a physical gate length of 22 nm is reported. The impact of random discrete dopant (RDF), line edge roughness (LER) and metal gate granularity (MGG) on threshold voltage (VTH), drain-induced-barrier-lowering (DIBL) and on-current (Ion) are analyzed both individually and combined together. Results indicate that although MGG is the dominated variability source in the FD-SOI transistor, RDF has critical impact on the on-current variability. Moreover, the combination of RDF and LER can still dramatically modulate short channel effect behavior in the transistor