Add to ORKGThermal management of next generation of semiconductor devices is becoming more challenging, as the device power increases and device dimensions decrease. The work is addressing novel thermal measurement and management for planar heterostructure Gunn diodes, which will be of strategic importance for UK technology and industry
Thermal limitations are an increasing issue in micro-electronic performance and reliability. This st...
The packing density and power capacity of integrated electronics is increasing resulting in higher t...
GaN-based planar Gunn diodes are promising terahertz sources for monolithic microwave and terahertz ...
Thermal management of next generation of semiconductor devices is becoming more challenging, as the ...
Electronic devices are shrinking in size and new materials, for example gallium nitride (GaN) are b...
Modern high frequency electronic devices are continually becoming smaller in area but capable of gen...
Electronic devices are shrinking in size and new materials, for example gallium nitride (GaN) are b...
The paper describes the use of a novel microparticle sensor (~3 μm diameter) and infra-red (IR) micr...
The paper describes the planar Gunn diode, which is well suited to providing milli-metric and tera h...
[EN]Planar Gunn diodes on In0.53Ga0.47 As with lengths between 2 and 5 μm have been fabricated and c...
The paper describes design and fabrication of GaAs 100 mW Gunn diodes for operation at ~35 GHz. As ...
The thermal management of structures such as Monolithic Microwave Integrated Circuits (MMICs) is imp...
The paper describes design and fabrication of GaAs I()(} mW Gunn diodes for operation at-35 GHz. As ...
This thesis sets out a series of new techniques to improve the thermal management of power electroni...
The authors would like to thank the staff of the James Watt Nanofabrication Centre at the University...
Thermal limitations are an increasing issue in micro-electronic performance and reliability. This st...
The packing density and power capacity of integrated electronics is increasing resulting in higher t...
GaN-based planar Gunn diodes are promising terahertz sources for monolithic microwave and terahertz ...
Thermal management of next generation of semiconductor devices is becoming more challenging, as the ...
Electronic devices are shrinking in size and new materials, for example gallium nitride (GaN) are b...
Modern high frequency electronic devices are continually becoming smaller in area but capable of gen...
Electronic devices are shrinking in size and new materials, for example gallium nitride (GaN) are b...
The paper describes the use of a novel microparticle sensor (~3 μm diameter) and infra-red (IR) micr...
The paper describes the planar Gunn diode, which is well suited to providing milli-metric and tera h...
[EN]Planar Gunn diodes on In0.53Ga0.47 As with lengths between 2 and 5 μm have been fabricated and c...
The paper describes design and fabrication of GaAs 100 mW Gunn diodes for operation at ~35 GHz. As ...
The thermal management of structures such as Monolithic Microwave Integrated Circuits (MMICs) is imp...
The paper describes design and fabrication of GaAs I()(} mW Gunn diodes for operation at-35 GHz. As ...
This thesis sets out a series of new techniques to improve the thermal management of power electroni...
The authors would like to thank the staff of the James Watt Nanofabrication Centre at the University...
Thermal limitations are an increasing issue in micro-electronic performance and reliability. This st...
The packing density and power capacity of integrated electronics is increasing resulting in higher t...
GaN-based planar Gunn diodes are promising terahertz sources for monolithic microwave and terahertz ...