This work investigates new gate drive power supply configurations and a novel multi-steppackaging concept in order to improve the performance of series-connected SiC-MOSFETs. The new gate drive configurations are proposed in order to reduce noise currents that circulate in the control part of the electrical system. Furthermore, a new gate drive power supply is proposed to increase the dv/dt of the switching cell. These improvements, i.e., noise current reduction and dv/dt boosting, are achieved by modifying the impedance of the gate drive circuitry. The novel multi-step packaging concept is proposed in order to improve the voltage sharing performance. The proposed package geometry considers optimal dielectric isolation for each device leadi...
The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry d...
The objective of this thesis is to assess the challenges associated with driving Silicon Carbide (Si...
Silicon Carbide (SiC) MOSFETs offer high speed switching for power applications at high blocking vol...
This work investigates new gate drive power supply configurations and a novel multi-steppackaging co...
International audienceThis paper presents a Multi-Step Packaging (MSP) concept for optimizing implem...
International audienceIn power converter configurations like multi-cell, multi-level, series connect...
Silicon carbide (SiC) devices can significantly increase power efficiency, temperature reliability, ...
The trend in the development of power converters is focused on efficient systems with high power den...
International audienceNowadays new Silicon Carbide (SiC) MOSFET transistors are available on the mar...
A series connection of SiC MOSFETs for kV blocking capability can enable more design flexibility in ...
Silicon Carbide (SiC) MOSFETs offer rapid switching and low on-state voltages. Connecting SiC MOSFET...
The trend in power electronic applications is to reach higher power density and higher efficiency. C...
International audienceThis paper presents the study on gate driver circuitries implemented to drive ...
Today’s power converter designs, especially in the automotive or the all-electrical aircraft industr...
abstractEN: <p>The breakdown voltages of the currently available 1.2 and 1.7-kV classes Silicon Carb...
The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry d...
The objective of this thesis is to assess the challenges associated with driving Silicon Carbide (Si...
Silicon Carbide (SiC) MOSFETs offer high speed switching for power applications at high blocking vol...
This work investigates new gate drive power supply configurations and a novel multi-steppackaging co...
International audienceThis paper presents a Multi-Step Packaging (MSP) concept for optimizing implem...
International audienceIn power converter configurations like multi-cell, multi-level, series connect...
Silicon carbide (SiC) devices can significantly increase power efficiency, temperature reliability, ...
The trend in the development of power converters is focused on efficient systems with high power den...
International audienceNowadays new Silicon Carbide (SiC) MOSFET transistors are available on the mar...
A series connection of SiC MOSFETs for kV blocking capability can enable more design flexibility in ...
Silicon Carbide (SiC) MOSFETs offer rapid switching and low on-state voltages. Connecting SiC MOSFET...
The trend in power electronic applications is to reach higher power density and higher efficiency. C...
International audienceThis paper presents the study on gate driver circuitries implemented to drive ...
Today’s power converter designs, especially in the automotive or the all-electrical aircraft industr...
abstractEN: <p>The breakdown voltages of the currently available 1.2 and 1.7-kV classes Silicon Carb...
The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry d...
The objective of this thesis is to assess the challenges associated with driving Silicon Carbide (Si...
Silicon Carbide (SiC) MOSFETs offer high speed switching for power applications at high blocking vol...