Measurements have been made on the angular dependence of the magnetoresistance effect and the Hall effect on oriented w-type indium antimonide samples. The measurements were taken at room temperature and liquid air temperature using a magnetic field strength of about 5000 gauss. Besides evidence of inhomogeneity, the results show directional dependence of the longitudinal magnetoresistance. The largest value was found in the (100) direction. This can be explained if, in addition to electrons at the central minimum, there is some filling of the {111} minima in k space
We address the inherent high-field magnetoresistance (MR) of indium antimonide epilayers on GaAs (00...
We address the inherent high-field magnetoresistance (MR) of indium antimonide epilayers on GaAs (00...
International audienceWe explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Pl...
Measurements have been made of the angular dependence of magnetoresistance and Hall effect of indium...
Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated in polycr...
D.C. measurements were made of the magnetoresistance and magneto-thermo-electric power to study the ...
Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated in polycr...
In the present paper the Hall measurement in the liquid state of metals, using two-frequency method,...
Twelve components of the galvanomagnetic tensor in antimony single crystals are measured in a magnet...
Abstract.Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated ...
We have measured the Hall effect and the transverse magnetoresistance in NbSe3 single crystals. In t...
In Mn-doped InSb single crystals an unusual, for nonmagnetic semiconductors, dependence on manganese...
This Investigation was undertaken in an effort to compare the electrical properties of thin layers o...
We have measured the electrical resistivity, Hall effect, and magnetization of a NdB6 single crystal...
We have measured the Hall effect and the transverse magnetoresistance in NbSe 3 single crystals. In ...
We address the inherent high-field magnetoresistance (MR) of indium antimonide epilayers on GaAs (00...
We address the inherent high-field magnetoresistance (MR) of indium antimonide epilayers on GaAs (00...
International audienceWe explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Pl...
Measurements have been made of the angular dependence of magnetoresistance and Hall effect of indium...
Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated in polycr...
D.C. measurements were made of the magnetoresistance and magneto-thermo-electric power to study the ...
Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated in polycr...
In the present paper the Hall measurement in the liquid state of metals, using two-frequency method,...
Twelve components of the galvanomagnetic tensor in antimony single crystals are measured in a magnet...
Abstract.Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated ...
We have measured the Hall effect and the transverse magnetoresistance in NbSe3 single crystals. In t...
In Mn-doped InSb single crystals an unusual, for nonmagnetic semiconductors, dependence on manganese...
This Investigation was undertaken in an effort to compare the electrical properties of thin layers o...
We have measured the electrical resistivity, Hall effect, and magnetization of a NdB6 single crystal...
We have measured the Hall effect and the transverse magnetoresistance in NbSe 3 single crystals. In ...
We address the inherent high-field magnetoresistance (MR) of indium antimonide epilayers on GaAs (00...
We address the inherent high-field magnetoresistance (MR) of indium antimonide epilayers on GaAs (00...
International audienceWe explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Pl...