Magnetoresistance at medium and high fields in indium antimonide and indium arsenide.

Measurements have been made of the angular dependence of magnetoresistance and Hall effect of indium antimonide at room and liquid air temperatures in fields less than 7,000 oersted, and of the transverse magnetoresistance at room temperature of indium antimonide and indium arsenide in transient fields up to 3 x 10^5 oersted. The lower field results confirm the existence of a small positive longitudinal magnetoresistance not due to sample and field misalignment but due to either a cubical anisotropy of conduction properties or to sample inhomogeneity. Some structure in the angular variation is apparent at 77°K