Add to ORKGA study was made of the dependence of the breakdown voltage VB of silicon diffused p-n junctions upon diffusion time, diffusion temperature and resistivity. A statistically planned experiment indicated that no other variables in the process have any influence upon the breakdown voltage. For a breakdown voltage up to 300 volts the junction still can be approximated as a linearly graded one. [...
The diffusion of phosphorus into epitaxial silicon has been investigated by evaluating the electrica...
Detailed within this paper is investigation of using low temperature processes to activate dopant in...
It is the purpose of this thesis to give in detail a theory to describe the mechanism whereby negati...
Silicon N~-, P, P- ~ diffused junction diodes have been made by diffusion of B and P into p-type Si....
Measurements are made on Si p - n junctions under reverse bias in the unstable avalanche breakdown r...
This report describes an equivalent doping profile transformation method with which the avalanche br...
The article considers structural and technological parameters affecting breakdown voltage of a BSIT ...
The purpose of this thesis is the extension of Gunn\u27s work on the avalanche phenomenon and the co...
In this paper, the breakdown voltage in avalanche photodiodes operating in Geiger mode is investigat...
Application of Photon Emission Microscopy (PEM) in semiconductor characterization often shows a line...
The objective of this study was to develop and demonstrate a technology for producing optical signal...
This paper describes a new analytical method called the equivalent doping profile of a composite p-n...
This communication describes the voltage‐current characteristics in the breakdown region of p‐n jun...
The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs were examined ...
A method is presented for calculating numerically the reverse current of p-n junctions, taking the m...
The diffusion of phosphorus into epitaxial silicon has been investigated by evaluating the electrica...
Detailed within this paper is investigation of using low temperature processes to activate dopant in...
It is the purpose of this thesis to give in detail a theory to describe the mechanism whereby negati...
Silicon N~-, P, P- ~ diffused junction diodes have been made by diffusion of B and P into p-type Si....
Measurements are made on Si p - n junctions under reverse bias in the unstable avalanche breakdown r...
This report describes an equivalent doping profile transformation method with which the avalanche br...
The article considers structural and technological parameters affecting breakdown voltage of a BSIT ...
The purpose of this thesis is the extension of Gunn\u27s work on the avalanche phenomenon and the co...
In this paper, the breakdown voltage in avalanche photodiodes operating in Geiger mode is investigat...
Application of Photon Emission Microscopy (PEM) in semiconductor characterization often shows a line...
The objective of this study was to develop and demonstrate a technology for producing optical signal...
This paper describes a new analytical method called the equivalent doping profile of a composite p-n...
This communication describes the voltage‐current characteristics in the breakdown region of p‐n jun...
The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs were examined ...
A method is presented for calculating numerically the reverse current of p-n junctions, taking the m...
The diffusion of phosphorus into epitaxial silicon has been investigated by evaluating the electrica...
Detailed within this paper is investigation of using low temperature processes to activate dopant in...
It is the purpose of this thesis to give in detail a theory to describe the mechanism whereby negati...