The spin unpolarised to spin polarised v = 2/3 phase transition is studied in narrow quantum wells. The phase transition is mapped in the filling factor (v), density (n)-plane and is well described assuming a rootn dependence of the Composite Fermion effective mass. At high currents the huge longitudinal resistance anomaly appears along the phase boundary. A model is presented that treats the current induced nuclear spin polarisation as an additional source of disorder, which drastically alters the initial domain structure present at the phase boundary. Time and current dependent measurements at constant magnetic field indicate that a large alternating Hall field is necessary to maintain the high resistance state. (C) 2003 Elsevie...
\u3cp\u3eIn this study we have measured the magnetoresistance response of inverted HgTe quantum well...
4 pages including 4 figuresInternational audienceThe average electron spin-polarization $\cal P$ of ...
The magnetoresistance associated with quantum interference corrections in a high mobility, gated Inx...
The spin unpolarised to spin polarised v=2/3 phase transition is studied in narrow quantum wells. Th...
The spin unpolarised to spin polarised v=2/3 phase transition is studied in narrow quantum wells. Th...
The spin unpolarised to spin polarised v=2/3 phase transition is studied in narrow quantum wells. Th...
We observe the transition from a spin-unpolarized to a polarized nu=2/3 fractional quantum Hall sta...
We observe the transition from a spin-unpolarized to a polarized ν=2/3 fractional quantum Hall state...
We observe the transition from a spin-unpolarized to a polarized ν=2/3 fractional quantum Hall state...
Ultrafast optical methods are used to study low temperature nuclear spin polarisation and electron s...
We propose a mechanism for the observed suppression of the two-dimensional (2D) conducting phase wh...
We propose a mechanism for the observed suppression of the two-dimensional (2D) conducting phase wh...
The magnetoresistance of a narrow single quantum well is spectacularly different from the usual beha...
The magnetoresistance of a narrow single quantum well is spectacularly different from the usual beha...
The magnetoresistance of a narrow single quantum well is spectacularly different from the usual beha...
\u3cp\u3eIn this study we have measured the magnetoresistance response of inverted HgTe quantum well...
4 pages including 4 figuresInternational audienceThe average electron spin-polarization $\cal P$ of ...
The magnetoresistance associated with quantum interference corrections in a high mobility, gated Inx...
The spin unpolarised to spin polarised v=2/3 phase transition is studied in narrow quantum wells. Th...
The spin unpolarised to spin polarised v=2/3 phase transition is studied in narrow quantum wells. Th...
The spin unpolarised to spin polarised v=2/3 phase transition is studied in narrow quantum wells. Th...
We observe the transition from a spin-unpolarized to a polarized nu=2/3 fractional quantum Hall sta...
We observe the transition from a spin-unpolarized to a polarized ν=2/3 fractional quantum Hall state...
We observe the transition from a spin-unpolarized to a polarized ν=2/3 fractional quantum Hall state...
Ultrafast optical methods are used to study low temperature nuclear spin polarisation and electron s...
We propose a mechanism for the observed suppression of the two-dimensional (2D) conducting phase wh...
We propose a mechanism for the observed suppression of the two-dimensional (2D) conducting phase wh...
The magnetoresistance of a narrow single quantum well is spectacularly different from the usual beha...
The magnetoresistance of a narrow single quantum well is spectacularly different from the usual beha...
The magnetoresistance of a narrow single quantum well is spectacularly different from the usual beha...
\u3cp\u3eIn this study we have measured the magnetoresistance response of inverted HgTe quantum well...
4 pages including 4 figuresInternational audienceThe average electron spin-polarization $\cal P$ of ...
The magnetoresistance associated with quantum interference corrections in a high mobility, gated Inx...