Growth nuclei and surface defects on GaAs((1)over-bar(1)over-bar(3)over-bar)B

Growth nuclei and surface defects are studied with scanning tunneling microscopy on the GaAs((1) over bar (1) over bar (3) over bar )13(8 x 1) surface prepared by molecular beam epitaxy. Besides steps, three types of distortions of the (8 x 1) reconstructed surface are found. First, there are growth nuclei formed by small cluster of Ga and As atoms. Second, there are zig-zigzag or zigzag-zag irregularities in the zigzag chains of the (8 x 1) reconstruction. Third, complete zigzag chains are added or removed. Based on the analysis of these surface defects, the epitaxial growth on the GaAs((1) over bar (1) over bar (3) over bar )B(8 x 1) surface is discussed