We investigate the far infrared magneto-optical transitions in self-assembled InAs quantum dots with different. lateral diameters and we show that a purely electronic model is unable to account for the experimental data. We calculate them coupling between the mixed electron-LO-phonon states using the, Frohlich Hamiltonian, from which we determine the polaron states as well as the energies of the dipolar electric transitions. The excellent agreement between the experiments and the calculations obtained for the different samples provides strong evidence that the magneto-optical transitions arise between polaron states and that the electrons and LO phonons experience a strong coupling regime
Three distinct channels for the decay of polarons in InAs quantum dots are identified using energy a...
Far-infrared transitions in polar semiconductors are known to be affected by the presence of shallow...
Far-infrared transitions in polar semiconductors are known to be affected by the presence of shallow...
We report on the magneto-optical evidence and theoretical modelling of polaron effects in self-asse...
We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using f...
Resonant photoluminescence experiments performed on self-assembled InAs/GaAs quantum dots under stro...
Optical transitions in self-assembled InAs/AlAs quantum dots were investigated by photoluminescence ...
This thesis presents a study of electrons, holes and excitons confined in self-assembled InAs/GaAs q...
This thesis presents a theoretical study of electron-phonon interaction in InAs/GaAs quantum dots, w...
This thesis presents a study of electrons, holes and excitons confined in self-assembled InAs/GaAs q...
We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum do...
We investigate the FIR magneto-optical transitions in doped self-assembled InAs quantum dots with an...
International audienceWe investigate the interband transitions in several ensembles of self-assemble...
Semiconductor quantum dots (QDs) doped with magnetic impurities have been a focus of continuous rese...
Three distinct channels for the decay of polarons in InAs quantum dots are identified using energy a...
Three distinct channels for the decay of polarons in InAs quantum dots are identified using energy a...
Far-infrared transitions in polar semiconductors are known to be affected by the presence of shallow...
Far-infrared transitions in polar semiconductors are known to be affected by the presence of shallow...
We report on the magneto-optical evidence and theoretical modelling of polaron effects in self-asse...
We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using f...
Resonant photoluminescence experiments performed on self-assembled InAs/GaAs quantum dots under stro...
Optical transitions in self-assembled InAs/AlAs quantum dots were investigated by photoluminescence ...
This thesis presents a study of electrons, holes and excitons confined in self-assembled InAs/GaAs q...
This thesis presents a theoretical study of electron-phonon interaction in InAs/GaAs quantum dots, w...
This thesis presents a study of electrons, holes and excitons confined in self-assembled InAs/GaAs q...
We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum do...
We investigate the FIR magneto-optical transitions in doped self-assembled InAs quantum dots with an...
International audienceWe investigate the interband transitions in several ensembles of self-assemble...
Semiconductor quantum dots (QDs) doped with magnetic impurities have been a focus of continuous rese...
Three distinct channels for the decay of polarons in InAs quantum dots are identified using energy a...
Three distinct channels for the decay of polarons in InAs quantum dots are identified using energy a...
Far-infrared transitions in polar semiconductors are known to be affected by the presence of shallow...
Far-infrared transitions in polar semiconductors are known to be affected by the presence of shallow...