Time-resolved photoluminescence spectra of vertical cavity surface emitting laser (VCSEL) structures under different excitation intensity are investigated. The effect of the distributed Bragg reflectors (DBR) on the laser emission and the mechanism of multi-longitudinal-mode are analysed. A broad peak around 2.80eV is observed from the structure without DBR cavity when pumped under low excitation intensity. At higher excitation density up to 21.4kW/cm2, a lasing peak appears at 2.86eV, and exhibits a rapid growth and red shift with the increase of the excitation density. The decay time of the peak is about 66ps. When the spectrum is measured after the deposition of DBR on the top side of the grown nitride structure, the number of peaks incr...
We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with...
Vertical cavity surface emitting lasers (VCSELs) are semiconductor lasers with extremely short (~1 w...
High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity s...
Abstract—The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 p...
We report the recent progress of GaN-based VCSELs with two different laser structures. One is a hybr...
This paper reviews past research and the current state-of-the-art concerning gallium nitride-based v...
The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distanc...
Laser action with low threshold average pump power density ( 50 W cm2) at room temperature is repo...
Since the first demonstration of (Al, In, Ga)N-based blue vertical-cavity surface-emitting lasers (V...
An electrically pumped gallium nitride vertical-cavity surface-emitting laser exhibits promising per...
The Vertical-Cavity Surface-Emitting Laser (VCSEL) made from GaAs-based materials is an established ...
This study is an attempt to investigate the effect of distributed Bragg reflectors (DBRs) doping con...
The authors report on room temperature (RT) lasing action in two different types of nitride-based mi...
The gallium-nitride (GaN) semiconductor material has been the core of the revolutionary breakthrough...
Laser action with low threshold average pump power density (similar to 50 W. cm(-2)) at room tempera...
We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with...
Vertical cavity surface emitting lasers (VCSELs) are semiconductor lasers with extremely short (~1 w...
High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity s...
Abstract—The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 p...
We report the recent progress of GaN-based VCSELs with two different laser structures. One is a hybr...
This paper reviews past research and the current state-of-the-art concerning gallium nitride-based v...
The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distanc...
Laser action with low threshold average pump power density ( 50 W cm2) at room temperature is repo...
Since the first demonstration of (Al, In, Ga)N-based blue vertical-cavity surface-emitting lasers (V...
An electrically pumped gallium nitride vertical-cavity surface-emitting laser exhibits promising per...
The Vertical-Cavity Surface-Emitting Laser (VCSEL) made from GaAs-based materials is an established ...
This study is an attempt to investigate the effect of distributed Bragg reflectors (DBRs) doping con...
The authors report on room temperature (RT) lasing action in two different types of nitride-based mi...
The gallium-nitride (GaN) semiconductor material has been the core of the revolutionary breakthrough...
Laser action with low threshold average pump power density (similar to 50 W. cm(-2)) at room tempera...
We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with...
Vertical cavity surface emitting lasers (VCSELs) are semiconductor lasers with extremely short (~1 w...
High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity s...