Single-crystal silicon nanowires with the prism structures were synthesized by chemical vapor deposition of SiH4 gas at 450 degrees C. Fe particles which were located at the tip of the CNTs were employed as a catalyst for the growth of silicon nanowires (SiNWs). Transmission electron microscopy studies of the materials showed that the nanowires have a diameter of 50-70 nm and a length of several micrometers. High-resolution transmission electron microscopy demonstrated that the nanowires have excellent single-crystal characteristics. Both the CNTs and Fe play a key role in the growth process of the SiNWs. A growth mechanism was proposed for the growth of silicon nanowires under our experimental conditions. (c) 2005 Elsevier B.V. All rights ...
Silicon (Si) core–shell nanowires (NWs) were successfully prepared by very high frequency plasma-enh...
textUsing the vapor-liquid-solid (VLS) growth method, silicon nanowires and germanium nanowires are ...
Amorphous silicon nanowires were prepared by heating an Si substrate at high temperatures using an N...
In this paper, we report the synthesis of iron silicide and β-iron disilicide nanowires with ch...
Silicon nanowires (SiNWs) have been synthesized at temperatures in the range 300-400 degrees C by th...
Silicon nanowires have been synthesized by a simple process using a suitable support containing sili...
We report the formation of Si nanowires (SiNWs) by vapor-liquid-solid (V-L-S) mechanism where Si ato...
High quality silicon nanowires (SiNWs) were grown directly from n-(111) silicon single crystal subst...
For the first time silicon nanowires have been grown on indium (In) coated Si (100) substrates using...
For the first time silicon nanowires have been grown on indium (In) coated Si (100) substrates using...
The synthesis of Si nanowires was achieved via hot-wire chemical vapor deposition using an indium ca...
textUsing the vapor-liquid-solid (VLS) growth method, silicon nanowires and germanium nanowires are ...
Needle-like silicon nanowires (SiNWs) were successfully synthesized on gold-coated silicon substrate...
Formations of silicon nanowires using aurum and indium catalyst by plasma-enhanced chemical vapour ...
The file attached to this record is the author's final peer reviewed version. The Publisher's final ...
Silicon (Si) core–shell nanowires (NWs) were successfully prepared by very high frequency plasma-enh...
textUsing the vapor-liquid-solid (VLS) growth method, silicon nanowires and germanium nanowires are ...
Amorphous silicon nanowires were prepared by heating an Si substrate at high temperatures using an N...
In this paper, we report the synthesis of iron silicide and β-iron disilicide nanowires with ch...
Silicon nanowires (SiNWs) have been synthesized at temperatures in the range 300-400 degrees C by th...
Silicon nanowires have been synthesized by a simple process using a suitable support containing sili...
We report the formation of Si nanowires (SiNWs) by vapor-liquid-solid (V-L-S) mechanism where Si ato...
High quality silicon nanowires (SiNWs) were grown directly from n-(111) silicon single crystal subst...
For the first time silicon nanowires have been grown on indium (In) coated Si (100) substrates using...
For the first time silicon nanowires have been grown on indium (In) coated Si (100) substrates using...
The synthesis of Si nanowires was achieved via hot-wire chemical vapor deposition using an indium ca...
textUsing the vapor-liquid-solid (VLS) growth method, silicon nanowires and germanium nanowires are ...
Needle-like silicon nanowires (SiNWs) were successfully synthesized on gold-coated silicon substrate...
Formations of silicon nanowires using aurum and indium catalyst by plasma-enhanced chemical vapour ...
The file attached to this record is the author's final peer reviewed version. The Publisher's final ...
Silicon (Si) core–shell nanowires (NWs) were successfully prepared by very high frequency plasma-enh...
textUsing the vapor-liquid-solid (VLS) growth method, silicon nanowires and germanium nanowires are ...
Amorphous silicon nanowires were prepared by heating an Si substrate at high temperatures using an N...