This thesis investigates ion energy distributions (IEDs) during plasma immersion ion implantation (PIII). PIII is a surface modification technique where an object is placed in a plasma and pulse biased with large negative voltages. The energy distribution of implanted ions is important in determining the extent of surface modifications. IED measurements were made during PIII using a pulse biased retarding field energy analyser (RFEA) in a capacitive RF plasma. Experimental results were compared with those obtained from a two dimensional numerical simulation to help explain the origins of features in the IEDs. Time resolved IED measurements were made during PIII of metal and insulator materials and investigated the effects of the use of a me...
1980 Spring.Includes bibliographical references.An experimental investigation of the physical proces...
AbstractThe effect of magnetic field enhanced plasma immersion ion implantation (PIII) in silicon su...
The mass-resolved ion energy distribution (IED) at the grounded electrode has been determined in a 1...
Thesis (M.Sc.)-University of Natal, Durban, 1996.Plasma Source Ion Implantation (PSII) is the proces...
The core of this project focuses on the development of a method for prediction of ion implantation d...
Bibliography: p. 197-203.In Plasma Source Ion Implantation high energy [10-50 keV] plasma ions are i...
A simple one-dimensional theory is presented to assess the implantation of ions from the ion matrix ...
As the semiconductor industries are advancing towards atomic scale dimensions, the knowledge of ion ...
International audienceIn traditional beamline implantation, the incident ion mass and energy are wel...
Plazma daldırma iyon implantasyonu yöntemi dünya üzerinde çok yeni bir teknolojidir, parçaların hem ...
Experiments are reported in which two configurations for ablation-plasma-ion-implantation (APII) are...
A new generation multipurpose plasma immersion ion implanter (PIII) was custom designed, constructed...
The biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating obje...
158 p.The focus of this thesis is to achieve plasma based surface modification of polymers. Highly i...
Plasma properties can be characterised with a multitude of diagnostic techniques which are as varied...
1980 Spring.Includes bibliographical references.An experimental investigation of the physical proces...
AbstractThe effect of magnetic field enhanced plasma immersion ion implantation (PIII) in silicon su...
The mass-resolved ion energy distribution (IED) at the grounded electrode has been determined in a 1...
Thesis (M.Sc.)-University of Natal, Durban, 1996.Plasma Source Ion Implantation (PSII) is the proces...
The core of this project focuses on the development of a method for prediction of ion implantation d...
Bibliography: p. 197-203.In Plasma Source Ion Implantation high energy [10-50 keV] plasma ions are i...
A simple one-dimensional theory is presented to assess the implantation of ions from the ion matrix ...
As the semiconductor industries are advancing towards atomic scale dimensions, the knowledge of ion ...
International audienceIn traditional beamline implantation, the incident ion mass and energy are wel...
Plazma daldırma iyon implantasyonu yöntemi dünya üzerinde çok yeni bir teknolojidir, parçaların hem ...
Experiments are reported in which two configurations for ablation-plasma-ion-implantation (APII) are...
A new generation multipurpose plasma immersion ion implanter (PIII) was custom designed, constructed...
The biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating obje...
158 p.The focus of this thesis is to achieve plasma based surface modification of polymers. Highly i...
Plasma properties can be characterised with a multitude of diagnostic techniques which are as varied...
1980 Spring.Includes bibliographical references.An experimental investigation of the physical proces...
AbstractThe effect of magnetic field enhanced plasma immersion ion implantation (PIII) in silicon su...
The mass-resolved ion energy distribution (IED) at the grounded electrode has been determined in a 1...