Metastable defects in low-energy electron irradiated n-type 4H-SiC

After low-energy electron irradiation of epitaxial n-type 4H-SiC, the DUES peak amplitudes. of the defects Z(1/2) and EH6/7, which were already observed in as-grown layers, increased and the commonly found peaks EH1 and EH3 appeared. The bistable M-center, previously seen in high-energy proton implanted 4H-SiC, was detected. New bistable defects, the EB-centers, evolved after annealing out of the M-center, and EF3. The reconfiguration energies for one of the two EB-centers were determined to be about 0.96 eV for both transitions: from configuration I to II and from configuration II to I. Since low-energy electron irradiation (less than220 keV) affects mainly the carbon atom in SiC, both the M- and EB-centers are likely to be carbon related defects.Original Publication:Franziska Beyer, Carl Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima and Erik Janzén, Metastable defects in low-energy electron irradiated n-type 4H-SiC, 2010, Materials Science Forum, (645-648), 435-438.http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.435Copyright: Transtec Publicationshttp://www.ttp.net