Thermal power plants produce SO2 during combustion of fuel containing sulfur. One way to decrease the SO2 emission from power plants is to introduce a sensor as part of the control system of the desulphurization unit. In this study, SiC-FET sensors were studied as one alternative sensor to replace the expensive FTIR (Fourier Transform Infrared) instrument or the inconvenient wet chemical methods. The gas response for the SiC-FET sensors comes from the interaction between the test gas and the catalytic gate metal, which changes the electrical characteristics of the devices. The performance of the sensors depends on the ability of the test gas to be adsorbed, decomposed, and desorbed at the sensor surface. The feature of SO2, that it is diffi...
Particle emission from traffic, power plants or, increasingly, stoves and fireplaces poses a serious...
AbstractGas sensitive FETs based on SiC have been studied for the discrimination and quantification ...
Gas sensitive field effect transistors based on silicon carbide, SiC-FETs, have been studied for ind...
Experiments were performed both in the laboratory and a desulfurization pilot unit in order to impro...
While the car fleet becomes increasingly larger it is important to lower the amounts of pollutants f...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
Increasing oil prices and concerns about global warming have reinforced the interest in biofuels for...
Based on a diode coupled silicon carbide field effect transistor (FET) with platinum as catalytic ga...
In this paper temperature modulation and gate bias modulation of a gas sensitive field effect transi...
Commercially available nanosized powder of silicon carbide (named SiC), was thermally, morphological...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
Gas sensitive FETs based on SiC have been studied for the discrimination and quantification of hazar...
Environmental and health concern has increased the importance to monitor and control emissions from ...
With the increased interest in development of cheap, simple means for indoor air quality monitoring,...
Particle emission from traffic, power plants or, increasingly, stoves and fireplaces poses a serious...
AbstractGas sensitive FETs based on SiC have been studied for the discrimination and quantification ...
Gas sensitive field effect transistors based on silicon carbide, SiC-FETs, have been studied for ind...
Experiments were performed both in the laboratory and a desulfurization pilot unit in order to impro...
While the car fleet becomes increasingly larger it is important to lower the amounts of pollutants f...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
Increasing oil prices and concerns about global warming have reinforced the interest in biofuels for...
Based on a diode coupled silicon carbide field effect transistor (FET) with platinum as catalytic ga...
In this paper temperature modulation and gate bias modulation of a gas sensitive field effect transi...
Commercially available nanosized powder of silicon carbide (named SiC), was thermally, morphological...
A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the ...
Gas sensitive FETs based on SiC have been studied for the discrimination and quantification of hazar...
Environmental and health concern has increased the importance to monitor and control emissions from ...
With the increased interest in development of cheap, simple means for indoor air quality monitoring,...
Particle emission from traffic, power plants or, increasingly, stoves and fireplaces poses a serious...
AbstractGas sensitive FETs based on SiC have been studied for the discrimination and quantification ...
Gas sensitive field effect transistors based on silicon carbide, SiC-FETs, have been studied for ind...