Graphene growth on SiC under Arambient and H-intercalation

We grow epitaxial graphene on 6H-SiC (0001) substrates in Ar background and intercalatehydrogen to reform the carbon bu↵er layer into single and multilayered graphene. We willanalyze the graphene using a combination of techniques including optical microscopy,micro-Raman spectroscopy, Atomic Force Microscopy (AFM), and reflectance mappingand contactless measurements of sheet carrier density and charge carrier mobility. We havestudied in detail, the influence of growth parameters and in-situ surface preparation ofsubstrate on the thickness uniformity and surface morphology of graphene. Additionally,as-grown graphene layers were intercalated with H to obtain quasi-free standing layers ofgraphene with enhanced charge carrier mobility