Add to ORKGDottorato di ricerca in scienza dei materiali. 12. ciclo. Tutore Francesco Priolo. Coordinatore Emanuele RiminiConsiglio Nazionale delle Ricerche - Biblioteca Centrale - P.le Aldo Moro, 7, Rome; Biblioteca Nazionale Centrale - P.za Cavalleggeri, 1, Florence / CNR - Consiglio Nazionale delle RichercheSIGLEITItal
Point defects in semiconductors play a decisive role for the functionality of semiconductors. A deta...
We study enhanced/retarded diffusion of oxygen in doped silicon by means of first principle calculat...
International audienceAmong the common vacancy-related point defects in silicon, the E center is one...
Silicon technology is based on doping with atoms from the groups III and V of the periodic system, w...
The current understanding of dopant diffusion in silicon comes from the synthesis of experimental an...
Recently, anomalous, asymmetric diffusion of dopants in silicon during silicidation at temperatures ...
Molecular dynamics simulation of vacancy and self-interstitial atoms in silicon crystals was carried...
This thesis is organized as follows: • In chapter 2, our present understanding of the silicon vacan...
In this paper, we develop and analyze models for the coupled iffusion of dopants and point defects, ...
We study point-defect diffusion in crystalline silicon using the kinetic activation-relaxation techn...
We have investigated the room temperature diffusion and trapping phenomena of ion beam generated poi...
Lattice vacancies in silicon play an important role in atomistic diffusion theories. They form mobil...
Using the FEMAG software, fully time-dependent and global simulations are conducted to predict the d...
We considered the practically interesting, very fast nonlinear diffusion of metastable vacancies in ...
The diffusion of platinum in silicon is described by the kick-out and by the dissociative mechanism....
Point defects in semiconductors play a decisive role for the functionality of semiconductors. A deta...
We study enhanced/retarded diffusion of oxygen in doped silicon by means of first principle calculat...
International audienceAmong the common vacancy-related point defects in silicon, the E center is one...
Silicon technology is based on doping with atoms from the groups III and V of the periodic system, w...
The current understanding of dopant diffusion in silicon comes from the synthesis of experimental an...
Recently, anomalous, asymmetric diffusion of dopants in silicon during silicidation at temperatures ...
Molecular dynamics simulation of vacancy and self-interstitial atoms in silicon crystals was carried...
This thesis is organized as follows: • In chapter 2, our present understanding of the silicon vacan...
In this paper, we develop and analyze models for the coupled iffusion of dopants and point defects, ...
We study point-defect diffusion in crystalline silicon using the kinetic activation-relaxation techn...
We have investigated the room temperature diffusion and trapping phenomena of ion beam generated poi...
Lattice vacancies in silicon play an important role in atomistic diffusion theories. They form mobil...
Using the FEMAG software, fully time-dependent and global simulations are conducted to predict the d...
We considered the practically interesting, very fast nonlinear diffusion of metastable vacancies in ...
The diffusion of platinum in silicon is described by the kick-out and by the dissociative mechanism....
Point defects in semiconductors play a decisive role for the functionality of semiconductors. A deta...
We study enhanced/retarded diffusion of oxygen in doped silicon by means of first principle calculat...
International audienceAmong the common vacancy-related point defects in silicon, the E center is one...