Molecular-ray epitaxy of gaas and gaas/algaas heterostructures for microelectronics devices

A kinetic model of the epitaxial growth has been developed in the paper for the first time.Results of theoretical calculation by Monte Carlo method are conforming well with experimental results. The energy distribution of 2D-electrons in "b"-layers, placed close to a surface, and in interacting "b"-layers has been investigated. The technology of digital schemes with subnanosecond speed of responce of SHF devices has been developed on the base of specimens obtained as well as the technology of purpose heterostructures for devices of opto- and microelectronics of a picosecond range and precision metrological devices. The electrical resistance standard has been made on the base of heterostructures and introduced into operationAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio