Development of manufacturing process, investigation of photovoltaic properties and current unsteadinesses in zinc-doped silicon

The purpose is to develop the manufacturing process; to investigate the features of photovoltaic properties and low-frequency self-excited oscillations of current concerned with temperature-electric unsteadiness in zinc-doped silicon crystals. The recurable process for manufacturing zinc-doped silicon specimens is developed for the first time. The effects of temperature quenching of photoconductivity and the low-frequency self-excited oscillations of current depending on degree of doping and various external influences are studied for the first time. Based on the features of photovoltaic properties and self-excited oscillations of current in zinc-doped silicon specimens, the infrared detectors, the solide-state infralow-frequency oscillators and the detectors of temperature, magnetic field and mechanical loads are created under laboratory conditions. Area of application: electronic industryAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio