NUMERICAL SIMULATION OF POWERFUL HIGH-VOLTAGE BIPOLAR AND DISCRETE METAL-OXIDE-SEMICONDUCTOR (DMOS) TRANSISTORS

There the purpose are to develop and to study the rise methods of stability of powerful high-voltage bipolar and DMOS structures according to the phenomena of avalanche break-down, to optimize their construction on the basis of multidimensional mathematical and computer simulation. The dependences of break-down voltage of powerful high-voltage structures with the perihpery part as the guard ring or the system of divider rings on number of rings arranged by optimum and on their configuration within the wide scope of structural-production characteristics of like structures have been ascertained. The dependences of electric field on the space between the diffusion source p-cells and on their depth have been determined. Also the rigorous numerical calculation method of souree - run-off resistance in energized state in the DMOS transistors has been developed, the dependences of resistanse on the sizes of source p-cells, on the thickness of high-ohm layer have been obtained. The obtained results have been introduced in the experimental batches of DMOS transistors in the Research Institute of Electronics, VoronezhAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio