THE INVESTIGATION AND DEVELOPMENT OF THE TECHNOLOGY OF MANUFACTURE OF THE THERMOSTABLE WEAK-PENETRATIND CONTACT SYSTEMS OF THE SILICON INTEGRAL SCHEME

The thermodynamic and kinetic peculiarities of the process of the phase separation in the thin-film structures of the alloys of the transient metals on the silicon substructure have been considered. The model, explaining the character of the physico-chemical interaction of the transient metals alloys, the components of which for the intermetal compounds with siilicon, has been offered. The method of the simultaneous formation of the weak-penetrating silicide contact and the diffusion-barrier layer with the high thermal stability, made from the films of such alloys, to be alloyed with the third component, has been developed. The processes of interaction of films Ti - Co and Ti - Co - N with the silicon substructure have been investigated. It has been shown, that the annealing of the film Ti - Co - N allows to form the structure TiN/CoSi*002/Si. It has been established, that the diffusion of atoms Al from the upper current-conducting layer through TiN in such structure does not take place to a temperature of 590 degrees CAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio