CREATION OF EPITAXIAL Cd*00xHg*001*00-*00xTe LAYERS ON GALLIUM ARSENIDE BY A METHOD OF CHEMICAL DEPOSITION FROM VAPOURS OF DIMETHYLCADMIUM, DIETHYLTELLURIUM AND MERCURY

The aim is to study the deposition process of the CdTe, HgTe and Cd*00xHg*001*00-*00xTe layers from dimethylcadmium, diethyltellurium and metallic mercury vapours on the gallium arsenide bases and to create the methods for their production. The sufficient influence of the reactor wall temperature up to the pedestal on the growth rate and properties of the layers has been shown. The deposition model taking change of the vapour-gas mixture composition at its transfer to the base into consideration has been proposed. The computer-aided plant has been created, and the methods for creation of the epitaxial layers of the solid Cd*00xHg*001*00-*00xTe solution by a method for deposition of the alternating mercury and cadmium telluride layers with following homogenization of the layers at the expense of the diffusion have been developed. The mirror layers of Cd*00xHg*001*00-*00xTe/CdTe/GaAs with heterogeneity of the composition not more than 10% on the area 5 cm*992 and halfwidth in the oscillation curve of the X-ray diffraction 4 - 7 ang. min have been createdAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio