DEPOSITION OF FILMS AND ANNEALING OF RADIATION DEFECTS IN SILICON STRUCTURES AT ACTION OF IR- AND UV-RADIATION

The investigation objects are the silicon structures, optic activation and low-temperature operations in the technology of integrated circuits. The aim is to investigate the possibility for combined use of the UV- and IR-radiations for decrease of the temperature and duration of the processes connected with deposition of the silicon dioxide, oxidation of the metal films, re-distribution of the addition and cleaning of the silicon base surface. The entropy of the tetraetoxysilane (TEOS) in the gaseous state has been obtained firstly; the kinetic model for design of the silicon dioxide deposition rate has been proposed; the dissociation activation energy of TEOS has been designed; the decrase of the addition re-distribution duration at ion-thermic treatment (ITT) in combination with UV-activation has been revealed. The laboratory plant for photochemical deposition of the silicon dioxide has been created; the plants of ITT and structures of the oxides with thermo- and gas sensitive properties have been created; the software package for design of the photochemical deposition conditions of silicon dioxide has been developed. The cleaning technology of the surface of silicon bases by UV-radiation in combination with ITT and oxidation technology of the ITT metal films with UV-activation have been introduced. Application field: planar low-temperature production process of semiconductor devices and integrated circuitsAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio