DEVELOPMENT AND INVESTIGATION OF ELECTRON-BEAM EQUIPMENT FOR ANNEALING AND RECRYSTALLIZATION OF INTEGRATED ELECTRONICS STRUCTURES

The concrete task has been formulated, and the methodology for development and investigation of the computer-aided electron-beam plant with reproduced characteristics of the treatment for annealing and recrystallization of the large area semiconductor structures has been determined. The modelling for distribution of the temperature pattern in the moving volumetric electron-beam source permitted to formulate the requirements to the characteristics of the beam and word length character of the control parameters proceeding from technological requirements has been carried out. The functional structure and circuit engineering designs for unit of the high-speed controllers for control, check and information conversion on base of the complex of the transducers permitting to make check of the temperature uniformity at annealing have been developed. The design documentation has been developed, and the computer-aided electron-beam plant for annealing and recrystallization the investigation of which on the real semiconductor structures shown the total correspondence of the obtained results to the formulated tasks has been breadboardedAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio