Electrophysical and structural properties of dislocation-free silicon

Subject of inquiry is dislocation-free silicon crystals grown with the usage of crucible-free zone melting. The aim of the work is to reveal structure microdefects and to study salient features of their influence upon electrophysical properties of large in diameter dislocation-free silicon, which was given a heat-treatment under various regimes. A connection between structural and electrophysical characteristic of silicon grown under make-up heating was studied. There was offered an explanation for the revealed salient features of shapes of swirl- and D-defective areas. Impurity clouds dimensions dependence from crystal annealing temperature and inverse correlation of these dimensions according to changes in microdefects and deep-lying centres density have been disclosedAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio