SUPER-QUICK-ACTING DETECTION OF OPTICAL SIGNALS AT METAL - SEMICONDUCTOR CONTACT

There the processes of quick-acting detection of optical signals in the structures on the basis of metal-semiconductor contact have been studied in view to creation of photodetectors with the response speed in the field of unities and fractions of picoseconds. The measurement of signal of pulsed response has been executed with use of most quick-acting technique as the electrooptical gating. The technique of luminescent spectroscopy with high (100 fs) time resolution has been used for the first time for study of mechanism of internal response of photodiode. The opportunity to determine the main characteristics of metal - semiconductor contact for the double Schottky barrier structures in the contact system of Metal-Semiconductor-Metal (MSM) has been demonstrated for the first time. The motion of photogenerated charge carrier in the active volume of MSM diode structures with the opposing-pin location of contacts has been considered on the basis of self-agreed solution of two-dimensional adiabatic equation. The restrictions of principle for opportunity to rise the response speed of MSM diode in decrease of inter-contact distances have been studied. The opportunity for major improvement of signal of pulsed responce of MSM diode in decrease of bias voltage has been demonstrated for the first time.Available from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio