Add to ORKGThe new Auger-recombination mechanism of the unequilibrium carriers in the semiconductor quantum structures has been supposed firstly. It has been shown firstly that the rate of the new process is the power temperature function. The analytical expressions obtained for the Auger-recombination rate as an function of the quantum hole parameters enable to optimize the laser structure for a purpose of decreasing threshold current and increasing quantum outputAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio
The temperature dependence of the radiative and nonradiative components of the threshold current den...
The theoretical investigation of interzone Auger-processes in Kein semiconductors with degenerated h...
The work described in this thesis investigates the effects of band structure modifications, brought ...
The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterost...
A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum we...
We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well struc...
Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has be...
Different possible processes of non-radiative Auger recombination which occur in the active region ...
International audienceThe electroluminescence of GaInNAs/GaAs quantum well light-emitting diodes is ...
We have experimentally studied the interband photoluminescence spectra of InGaAsSb/AlGaAsSb quantum ...
The temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterol...
We have calculated radiative and Auger recombination rates due to localized recombination in individ...
The effects of energy-band structures on Auger recombination and its contribution to T//0 in GaInAsP...
Hydrostatic pressure and spontaneous emission techniques have been used to examine the important rec...
The radiative and nonradiative components of the threshold current in 1.3 mu m, p-doped and undoped ...
The temperature dependence of the radiative and nonradiative components of the threshold current den...
The theoretical investigation of interzone Auger-processes in Kein semiconductors with degenerated h...
The work described in this thesis investigates the effects of band structure modifications, brought ...
The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterost...
A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum we...
We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well struc...
Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has be...
Different possible processes of non-radiative Auger recombination which occur in the active region ...
International audienceThe electroluminescence of GaInNAs/GaAs quantum well light-emitting diodes is ...
We have experimentally studied the interband photoluminescence spectra of InGaAsSb/AlGaAsSb quantum ...
The temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterol...
We have calculated radiative and Auger recombination rates due to localized recombination in individ...
The effects of energy-band structures on Auger recombination and its contribution to T//0 in GaInAsP...
Hydrostatic pressure and spontaneous emission techniques have been used to examine the important rec...
The radiative and nonradiative components of the threshold current in 1.3 mu m, p-doped and undoped ...
The temperature dependence of the radiative and nonradiative components of the threshold current den...
The theoretical investigation of interzone Auger-processes in Kein semiconductors with degenerated h...
The work described in this thesis investigates the effects of band structure modifications, brought ...