DEVELOPMENT OF ELECTRIC INTERPOLATING MODELS FOR INCREASED ACCURACY OF MOD-TRANSISTORS

The aim is to develop the models of MOD-transistors with induced and built-in channels which are stable to the production process changes, for design of the super-large integrated systems in the static and dynamic conditions with submicrone dimensions of elements and to introduce them into the package of the circuit engineering design. The algorithm of forming adaptive curvilinear current grid with thickening arrangement of the assemblies in the most current function curvature places has been proposed. The Chamberlain's model for built-in channel has been improved, two new functioning conditions have been introduced. The conjugation of the analytical models with experimental data has been performed. The analytical model with built-in channel superpassing Chamberlain's model to 70 times in the lesser machine time expenditures has been created. The combined table-analytical circuit models superpassing the known analytical ones in the accuracy by more than one order 5 times more effective than the best table ones according to a number of assemblies and which are as flexible in the circuit designing as the analytical ones have been proposed. The developed models have been introduced into the device process of the enterpriseAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio