THERMO-STABLE FILM ELEMENTS OF SEMICONDUCTOR STRUCTURES ON BASE OF SOME TRANSITION METALS AND THEIR OXIDES

The work covers the film barrier-free contacts, storage capacitors and protective coatings with layers of transition metals and their compounds. The aim of the work is to create the multifilm structures on base of the transition metals and their oxides for silicon structures with complex surface relief providing the manufacture adaptability, quality and thermo-stability of the devices. The new regularities for recrystallization of the films in the thermic Ta*002O*005 on SiO*002 at temperatures up to 1,273 K have been determined; the new methods for investigation of the barrier properties in the protective coatings and also the model for calculation of film crystal coating contours have been developed. The technological conditions and production process of the film capacitors for super-large integrated circuits of the dynamic on-line memory (DOLM SLIC), modification variants of the crystals and the programs for computer modelling of the film contours have been proposed. The production process of the capacitors for memory elements of DOLM SLIC and also the modification variants of the pulse diode crystal have been introduced. The introduction efficiency is expressed in the improvement of the electrophysical capacitor characteristics and basic parameters of the KD521 type diodes. Application field: electronic industry, completing articles of electronic engineeringAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio