The analysis of the leakage currents of the complex semiconductor structures using the methods of mathematical modeling

The object of investigation: the electric-physical processes in the semiconductor structures of the complex spatial configuration. The purpose of the work: the development of the mathematical model and programs intended for the leakage currents design in the microelectronic structures of the complex spatial configuration. The mathematical model and the complex of programs for the leakage currents design in the dynamic memory cells with the grooved capacitor have been developed. Performed have been the design and analysis of the VAX leakage currents in the DOSD cells. The complex of programs for the computer has been developed. The program complex has been used in the laboratory investigations. The efficiency of introduction: accelerating the process of design of the dynamic storage devicesAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio