DIAGNOSTICS OF LARGE-SCALE IMPURITY ACCUMULATION IN SEMUICONDUCTORS AND ANALYSIS OF SUCH ACCUMULATIONS GROWN BY CHOKHRALSKY METHOD

The investigation objects are the silicon, germanium, gallium arsenide and indium phosphide. The aim is to investigate the impurity composition of the large-scale (up to 20 mu m) impurity accumulations and their recombination activity. The parameters of the accumulations (ionization energy of impurity centres forming the accumulations, concentration of accumulations, concentration of free carriers in them) have been determined. It has been showh that the impurity large-scale accumulations are the accumulations of the impurities ionized at T=300 K. It has been determined that the small defects ( equivalent to 2 mu m) are the accelerated recombination centres of the carriers. The classification of the accumulations in the silicon grown by a Chokhralsky method has been made.Available from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio