HIGH-FREQUENCY AND OPTIC PROPERTIES OF ULTRA-THIN FILAMENTS AND THREE-DIMENSIONAL LATTICES IN NANOSTRUCTURES OF CONDUCTORS AND SENICONDUCTORS

The high-frequency and optic properties of the ultra-thin filaments (UTF) and three-dimensional lattices of the nanostructures (TDLN) in the conductors and semiconductor structure-separated in the channels of the porous dielectric matrices have been investigated. The manifestation of a number of the dimensional and non-linear effects during investigation of the microwave properties in UTF of the conductors with diameters of the order of 10 nm has been discovered. The effeciency of transmissions of the high-frequency fields to the electrons in UTF has been demonstrated that can be used for creation of the microwave radiation absorbers and non-linear devices. It has been shown that the back screening time value of the non-vortex electric component in the high-frequency field in the conducting UTF has been reduced by several order in comparison with case of the non-elongated conductors and achieves the microwave and distant IR ranges. The creation of the three-dimensional solid-state photon crystals (FC) of optic range on base of the porous opals after deposition of InP on their inner surface has been demonstrated in experiment. It has been shown that the adjustment of the spectral position in the forbidden zone of the opal FK and optic absoption end of the semiconductors can be realized on base of the opal with semiconductor fillers that is the possible procedure for creation of the optic-non-linear media.Available from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio