Receiving the high-clean monocrystalline layers of cadmium telluride using the method of chemical sediment from the cadmium-dimethyl and diethyltellur vapours

The object of investigation: the epitaxial layers of the cadmium telluride. The purpose of the work: obtaining the high-clean monocrystalline layers of the cadmium telluride from the cadmium-dimethyl and diethyltellur vapours, studying the layers properties. The kinetics of settling the cadmium telluride layers on the heterobases in the wide interval of the experimental growth conditions has been investigated. The methods of settling of the mirror-smooth layers of the cadmium telluride with high cleanness and crystalline perfection have been developed. Obtained have been the layers of the cadmium telluride with the total content of admixtures not exceeding 2x10"-"4 at% and the content of the electroactive admixtures (1-5)x10"-"5 at%, maximum, the half-width of the curve of the roentgen diffraction swing 95-110 ang.s, the half-width of the bound exyton line in the photoluminescent spectres 0,3 to 0,6 meV with 4,2 K. The field of application: obtaining the high-clean epitaxial layers of semiconductor compounds A"2B"6Available from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio