Devices for combined correction of independent and modular information storage errors

The aim is to develop the organization methods of the devices for different ratio error correction in the semiconductor memory. The method of constructing codes correcting the double and/or modular errors has been proposed; the devices for decoding of the codes correcting the modular or double errors have been proposed. The multifunctional devices on the error control used for making the fail-safe system of semiconductor memory have been developed. The fail-safe units of information storage are introduced. The introduction efficiency is expressed in increasing repairless operation time of the articleAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio