Experimental investigation of cadmium and mercury concentration distribution profile in solid-state silicon diffusion zones

The paper is concerned with the specimens of monocrystalline silicon alloyed with phosphorus with different concentration from 10*991*993 to 10*991*997 cm*99-*993. The aim is the experimental determination of cadmium and mercury in silicon at different constant values of diffusion temperature and concentration of third component for studying interconnection of diffusion values. The Arrhenius relation with two constant parameters of arbitrary character has been re-arranged into the equation with two independent variables. The last equation unites several Arrhenius lines and is common for family of curves. The correlative dependence has been discovered between diffusion parameters. The set of formulated scientific propositions and formulae specified on their basis and the systematization of matters according to the numerical values of new diffusion values has been directed to the development of solid-state silicon diffusion zones necessary for manufacture of the microelectronic semiconductor devices and silicon SLICAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio