Photoelectric properties of surface barrier structures with non-plane boundary

The paper is concerned with the Schottky barriers produced by a metal spraying on the anisotropic-etched surface of group A"3B"5 semiconductors. The aim is to establish the circuit diagram mechanisms and to form the photoelectric current in structures with Schottky barrier on the microrelief semiconductor surface. The calculation of anomalous photoemission current stipulated by a tunneling of electrons from surface-emission layer into the metal through the dielectric gap has been performed. The expression for surface photo-emf in the barrier contact electrolyte - semiconductor has been obtained. The boundary parameters of metal-semiconductor with microrelief surface have been determined. The parameters of optimum microrelief providing the maximum sensitivity of barrier structures have been established. The decrease of radiation-stimulated ordering effect in semiconductors with microrelief surface has been discovered. Area of application: plants of electronic industryAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio