Investigation of electrophysical and radiation phenomena in silicon being doped with sulphur

Subject of inquiry is single-crystalline silicon with various impurities. The aim of the work is the investigation of electrophysical and radiation phenomena in silicon doped with sulphur for the creation of heat- and radiation-resistant materials and based on them instruments. Physical processes mechanisms running in silicon doped with sulphur under various doping conditions, secondary heat-treatment and under radiation effect have been suggested. A reproduceable and simple procedure of doping silicon with sulphur has been developed that does not lead to material surface erosion. A new method for heat- and radiation-resistant structures manufacturing has been offered on the basis of n-Si<b, s>Available from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio