The object of investigation: films of the polycrystalline silicon of the P-type. The purpose of the work: the development of the integral tensoconverter with the polysilicon tensoresistors, serviceable in the wide range of temperatures and posessing the small temperature dependence of the output signal. The methods for computing the tensosensitivity coefficients through the constants of the piezoresistance and elastic-resistance of the monocrystal silicon have been offered, the tensoresistive effect in the films of the high-alloy polysilicon has been experimentaly studied, the methods of the tensoconverters design have been developed. Obtained have been the analytical expressions for the polysilicon tensosensitivity coefficients with the di...
The work covers the film barrier-free contacts, storage capacitors and protective coatings with laye...
U radu su prikazana i analizirana svojstva visokodopiranih filmova polikristalnog silicija s primarn...
In this paper, about 30 mu m thick B-doped polycrystalline silicon (poly-Si) thin films were deposit...
The paper presents the study results of electrical properties of polycrystalline silicon films in si...
A full investigation into the piezoresistive effect in polycrystalline silicon is described. A theor...
The doctoral thesis deals with the structure and properties of the polycrystalline silicon layers de...
The thermodynamic and kinetic peculiarities of the process of the phase separation in the thin-film ...
The aim of this work was to study the possibilities of developing mechanical sensors with poly-Si pi...
The report presents the results of work on the development and manufacturing technology of integrate...
The work covers the silicon elastic sensitive elements of different desings and their structures man...
International audienceA thick layer selective polysilicon growth technique has been developed for mi...
The semiconductor films of amorphous silicon, cadmium sulphide, selenide and telluride and also copp...
The aim is to develop the basic principles of using current pulse annealing for control of the chara...
The paper is concerned with monocrystalline silicoe alloyed with rare-earth elements, isovalent admi...
U radu je prikazan kratki pregled fizikalnih modela prijenosa topline i električnih grijača. Analizi...
The work covers the film barrier-free contacts, storage capacitors and protective coatings with laye...
U radu su prikazana i analizirana svojstva visokodopiranih filmova polikristalnog silicija s primarn...
In this paper, about 30 mu m thick B-doped polycrystalline silicon (poly-Si) thin films were deposit...
The paper presents the study results of electrical properties of polycrystalline silicon films in si...
A full investigation into the piezoresistive effect in polycrystalline silicon is described. A theor...
The doctoral thesis deals with the structure and properties of the polycrystalline silicon layers de...
The thermodynamic and kinetic peculiarities of the process of the phase separation in the thin-film ...
The aim of this work was to study the possibilities of developing mechanical sensors with poly-Si pi...
The report presents the results of work on the development and manufacturing technology of integrate...
The work covers the silicon elastic sensitive elements of different desings and their structures man...
International audienceA thick layer selective polysilicon growth technique has been developed for mi...
The semiconductor films of amorphous silicon, cadmium sulphide, selenide and telluride and also copp...
The aim is to develop the basic principles of using current pulse annealing for control of the chara...
The paper is concerned with monocrystalline silicoe alloyed with rare-earth elements, isovalent admi...
U radu je prikazan kratki pregled fizikalnih modela prijenosa topline i električnih grijača. Analizi...
The work covers the film barrier-free contacts, storage capacitors and protective coatings with laye...
U radu su prikazana i analizirana svojstva visokodopiranih filmova polikristalnog silicija s primarn...
In this paper, about 30 mu m thick B-doped polycrystalline silicon (poly-Si) thin films were deposit...